Научная
деятельность
Университет ИТМО

Меню

Публикации

1. Усиков А.С., Helava H., Nikiforov A., Пузык М.В., Папченко Б.П., Ковалева Ю.В., Макаров Ю.Н. Электрохимическое травление p-n-GaN/AlGaN-фотоэлектродов // Письма в Журнал технической физики - 2016. - Т. 42. - № 9. - С. 80-87


2. Usikov A.S., Helava H.I., Nikiforov A., Puzyk M.V., Papchenko B.P., Kovaleva I.V., Makarov Y.N. Electrochemical etching of p–n-GaN/AlGaN photoelectrodes // Technical Physics Letters - 2016, Vol. 42, No. 5, pp. 482-485


3. Zubenko T.K., Puzyk M.V., Stozharov V.M., Ermakov I.A., Kovalev D.S., Ivanova S., Usikov A.S., Medvedev O.S., Papchenko B.P., Kurin S.Y., Antipov A.A., Chernyakov A.E. Etching of GaN layers at electrolysis under UV-irradiation // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012050


4. Marchenko O.N., Ermakov I.A., Puzyk M.V., Kovalev D.S., Ivanova S.A., Papchenko B.P., Usikov A.S., Chernyakov A.E. Specific of a photocurrent in GaN-based photoelectrochemical cell // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012108


5. Kurin S.Y., Puzyk M.V., Ermakov I.A., Antipov A.A., Barash I.S., Roenkov A.D., Ratnikov V.V., Usikov A.S., Papchenko B.P., Helava H., Makarov Y.N., Chernyakov A.E. Optical transmission of strained GaN/sapphire structures // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012048


6. Fomichev A.D., Kurin S.Y., Ermakov I.A., Puzyk M.V., Usikov A.S., Helava H., Nikiforov A., Papchenko B.P., Makarov Y.N., Chernyakov A.E. Photoelectrochemical corrosion of GaN-based p-n structures // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012049


7. Usikov A.S., Helava H.I., Nikiforov A.Y., Puzyk M.V., Papchenko B.P., Makarov Y.N. Photoelectrochemical corrosion of gaN/AlGaN-based p-n structures // American Journal of Applied Sciences - 2016, Vol. 13, No. 7, pp. 845-852


8. Usikov A.S., Ermakov I.A., Helava H., Kurin S.Y., Nikiforov A., Papchenko B.P., Puzyk M.V., Polyakov A., Lee I., Makarov Y.N. Investigation of water splitting using III-N structures // Physica status solidi (b) - 2017, Vol. 254, No. 8, pp. 1600744


9. Reshchikov M.A., Usikov A.S., Helava H.I., Makarov Y.N., Puzyk M.V., Papchenko B.P. Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE // Journal of Electronic Materials - 2016, Vol. 45, No. 4, pp. 2178-2183


10. Usikov A.S., Nikiforov A., Khait O., Medvedev O., Ermakov I.A., Papchenko B.P., Puzyk M.V., Antipov A., Barash I., Kurin S., Roenkov A., Helava H., Makarov Y. Investigation of direct water photoelectrolysis process using III-N structures // Materials Science Forum - 2017, Vol. 897, pp. 723-726